HSQ dielectric interlayer

Details HSQ dielectric interlayer HSQ dielectric interlayer

1999-07-22

2000-07-04

Clark, Sheila V.

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

257760, 257752, H01L 2358

Patent

active

060842903

ABSTRACT:
The use of HSQ as a dielectric interlayer without cracking is achieved by depositing HSQ on a planarized dielectric layer, such as a silicon oxide derived from TEOS or silane. Embodiments include depositing a first HSQ gap fill layer on a patterned metal layer for gap filling leaving a non-planar upper surface. Depositing a thin layer of silicon oxide and planarizing the upper surface as by CMP, and depositing the HSQ dielectric interlayer on the planarized upper surface of the oxide layer.

REFERENCES:
patent: 5548159 (1996-08-01), Jeng
patent: 5607773 (1997-03-01), Ahlburn et al.
patent: 5665657 (1997-09-01), Lee
patent: 5693566 (1997-12-01), Cheung
patent: 5728630 (1998-03-01), Nishimura et al.
patent: 5888911 (1999-03-01), Ngo et al.
patent: 5973387 (1999-10-01), Chen et al.
patent: 5990558 (1999-11-01), Tran et al.

Affiliated with

Also associated with

Rating

HSQ dielectric interlayer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with HSQ dielectric interlayer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and HSQ dielectric interlayer will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1488992