Housing for semiconductor device with occlusion gas removed

Details Housing for semiconductor device with occlusion gas removed Housing for semiconductor device with occlusion gas removed

1991-01-15

1992-07-21

Jackson, Jr., Jerome

Electricity: electrical systems and devices

Safety and protection of systems and devices

With specific current responsive fault sensor

357 75, 357 81, 361386, 361389, H01L 2302, H01L 2316, H02B 100, H05K 720

Patent

active

051327791

ABSTRACT:
A housing for a semiconductor device is improved to avoid thermal distortion. The housing is formed of an Al-Si compound material and includes a housing member having a space for holding the semiconductor device. Occlusion gas contained in the Al-Si compound material is removed so that at least any nitrogen gas remaining in occlusion after degassing is 0.1 percent by weight or less. Since the housing member substantially does not contain occlusion gas, the housing is not subject to thermal distortion even though the housing is exposed to heat in operation.

REFERENCES:
patent: 4830820 (1989-05-01), Itoh et al.
patent: 4926242 (1990-05-01), Itoh et al.

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