Hot plate cure process for BCB low k interlevel dielectric

Details Hot plate cure process for BCB low k interlevel dielectric Hot plate cure process for BCB low k interlevel dielectric

1998-11-06

2000-05-23

Chaudhuri, Olik

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

438780, 438778, H01L 2131

Patent

active

060665742

ABSTRACT:
A dielectric layer comprising a benzocyclobutene (BCB)-based low dielectric constant (low k) material is formed on a surface of a semiconductor wafer substrate by (a) spin coating a layer of a fluid material comprising BCB in a liquid solvent or dispersant vehicle on the substrate; (b) baking the coated substrate at a first temperature and for a first time interval to remove the solvent; (c) curing the baked coating by heating at a second temperature higher than the first temperature, and for a second time interval; and (d) subjecting the substrate with cured coating thereon to a cool-down treatment at a third temperature and for a third time interval. Embodiments include performing steps (a)-(d) consecutively and in the same apparatus. Other embodiments include processing in an "on track" type automated semiconductor processing apparatus.

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