Hot-carrier reliability in submicron MOS devices by oxynitridati

Details Hot-carrier reliability in submicron MOS devices by oxynitridati Hot-carrier reliability in submicron MOS devices by oxynitridati

1997-03-19

1998-07-28

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438769, 438770, H01L 21265, H01L 21336

Patent

active

057862540

ABSTRACT:
A method of manufacturing a semiconductor device with reduced hot-carrier induced degradation wherein a nitrogen species is introduced into the gate oxide layer. The introduction of the nitrogen species may be done after the gate etch, after the spacer material deposition, or after the spacer etch. The nitrogen species may also be introduced into the gate oxide after both the gate etch and the spacer material deposition or after both the gate etch and the spacer etch or after all three steps.

REFERENCES:
patent: 5382533 (1995-01-01), Ahmad et al.
patent: 5567651 (1996-10-01), Berti et al.
patent: 5591681 (1997-01-01), Wristers et al.
patent: 5650344 (1997-07-01), Ito et al.
Impact of Surface Proximity Gettering and Nitrided Oxide Side-Wall Spacer by Nitrogen Implantation on Sub-Quarter Micron CMOS LDD FETs by S. Shimizu, T.Kuroi, Y. Kawasaki, S. Kusunoki, Y.Okumura, M. Inuishi and H. Miyoshi , 1995 IEEE, IEDM 95-859.

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