Horizontal memory gain cells

Details Horizontal memory gain cells Horizontal memory gain cells

2006-09-19

2006-09-19

Crane, Sara (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S311000, C977S742000

Reexamination Certificate

active

07109546

ABSTRACT:
A gain cell for a memory circuit, a memory circuit formed from multiple gain cells, and methods of fabricating such gain cells and memory circuits. The memory gain cell includes a storage capacitor, a write device electrically coupled with the storage capacitor for charging and discharging the storage capacitor to define a stored electrical charge, and a read device. The read device includes one or more semiconducting carbon nanotubes each electrically coupled between a source and drain. A portion of each semiconducting carbon nanotube is gated by the read gate and the storage capacitor to thereby regulate a current flowing through each semiconducting carbon nanotube from the source to the drain. The current is proportional to the electrical charge stored by the storage capacitor. In certain embodiments, the memory gain cell may include multiple storage capacitors.

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