Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-05-08
2007-05-08
Baumeister, B. William (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S309000
Reexamination Certificate
active
09795949
ABSTRACT:
A homojunction bipolar transistor with performance characteristics similar to more costly heterojunction or retrograde base transistors. The high emitter resistivity found in prior homojunction devices is circumvented using a low work function material layer in forming the emitter. This produces an economically viable high performance alternative to SiGe HBTs or SiGe retrograde base transistors.
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Ahn Kie Y.
Forbes Leonard
Baumeister B. William
Farahani Dana
Micro)n Technology, Inc.
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