Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate
Reexamination Certificate
2007-11-06
2007-11-06
Louie, Wai-Sing (Department: 2814)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
C438S503000, C438S507000
Reexamination Certificate
active
10932127
ABSTRACT:
A photodetector (100, 200, 300) comprising a gallium nitride substrate, at least one active layer (104, 302) disposed on the substrate (102, 202, 306), and a conductive contact structure (106, 210, 308) affixed to the active layer (104, 302) and, in some embodiments, the substrate (102, 202, 306). The invention includes photodetectors (100, 200, 300) having metal-semiconductor-metal structures, P-i-N structures, and Schottky-barrier structures. The active layers (104, 302) may comprise Ga1-x-yAlxInyN1-z-wPzAsw, or, preferably, Ga1-xAlxN. The gallium nitride substrate comprises a single crystal gallium nitride wafer and has a dislocation density of less than about 105cm−2. A method of making the photodetector (100, 200, 300) is also disclosed.
REFERENCES:
patent: 4902136 (1990-02-01), Müeller et al.
patent: 5637531 (1997-06-01), Porowski et al.
patent: 5679152 (1997-10-01), Tischler
patent: 5698865 (1997-12-01), Gerner et al.
patent: 5770887 (1998-06-01), Tadatomo et al.
patent: 5810925 (1998-09-01), Tadatomo et al.
patent: 6034404 (2000-03-01), Soares
patent: 6104074 (2000-08-01), Chen
patent: 6121634 (2000-09-01), Saito et al.
patent: 6225650 (2001-05-01), Tadatomo et al.
patent: 6258466 (2001-07-01), McTeer
patent: 6294016 (2001-09-01), Kim et al.
patent: 6377596 (2002-04-01), Tanaka et al.
patent: 6596079 (2003-07-01), Vaudo et al.
patent: 6627552 (2003-09-01), Nishio et al.
patent: 6806508 (2004-10-01), D'Evelyn et al.
patent: 6936488 (2005-08-01), D'Evelyn et al.
patent: 0 937 790 (1999-08-01), None
patent: WO95/04845 (1995-02-01), None
Elsevier, Materials Science & Engineering B44, “Growth and Properties of Single Crystalline GaN Substrates and Homoepitaxial Layers”, S. Porowski, pp. 407-413, 1997.
Elsevier, Diamond and Related Materials, “AMMONO Method of GaN and AIN Production”, R. Dwilinski et al., vol. 7, pp. 1348-1350, 1998.
MRS Internet Journal of Nitride Semiconductor Research, “Near Defect Free GaN Substrates”, S. Porowski, vol. 4S1, G1.3, 1999.
Chem. Material, “Ammonothermal Synthesis of Cubic Gallium Nitride”, Andrew P. Purdy, vol. 11, pp. 1648-1651, 1999.
Materials Research Society Symp. Proc., “Materials Chemistry and Bulk Crystal Growth of Group III Nitrides in Supercritical Ammonia”, Joseph W. Kolis et al., vol. 495, pp. 367-372, 1998.
MRS Internet J. Nitride Semicond. Res. 4S1, G10.2, “GaN Homoepitaxy for Device Applications”, M. Kamp et al., 1999.
Application RD-27,007—“Crystalline Gallium Nitride and Method for Forming Crystalline Gallium Nitride”.
Application RD-27,904—“Homoepitaxial Gallium-Nitride-Based Light Emitting Device and Method for Producing”.
Chu Kanin
D'Evelyn Mark Philip
Evers Nicole Andrea
General Electric Company
Louie Wai-Sing
LandOfFree
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