Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-04-17
2007-04-17
Smoot, Stephen W. (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S411000
Reexamination Certificate
active
10863953
ABSTRACT:
A gate dielectric and method of fabricating a gate dielectric that produces a more reliable and thinner equivalent oxide thickness than conventional SiO2gate oxides are provided. Gate dielectrics formed from metals such as zirconium are thermodynamically stable such that the gate dielectrics formed will have minimal reactions with a silicon substrate or other structures during any later high temperature processing stages. The addition of nitrogen to the microstructure of the gate dielectric promotes an amorphous phase that further improves the electrical properties of the gate dielectric. The process shown is performed at lower temperatures than the prior art, which inhibits unwanted species migration and unwanted reactions with the silicon substrate or other structures. By using a thermal evaporation technique to first deposit a metal layer, the underlying substrate surface smoothness is preserved, thus providing improved and more consistent electrical properties in the resulting gate dielectric.
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Ahn Kie Y.
Forbes Leonard
Micro)n Technology, Inc.
Schwegman Lundberg Woessner & Kluth P.A.
Smoot Stephen W.
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