Highly integrated bipolar junction transistors having trench-bas

Details Highly integrated bipolar junction transistors having trench-bas Highly integrated bipolar junction transistors having trench-bas

1998-05-08

2000-08-08

Nelms, David

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Having heterojunction

438318, 438268, 438378, 438586, H01L 218222

Patent

active

061001511

ABSTRACT:
Highly integrated bipolar junction transistors include a semiconductor region, a collector region of first conductivity type in the semiconductor region and a trench extending adjacent the collector region. A three-dimensional base region of second conductivity type is also provided. The base region extends along a bottom of the trench and forms a P-N junction with the collector region. An emitter region of first conductivity type is also provided in the base region. The emitter region extends along a sidewall of the trench. The base region preferably comprises an extrinsic base region extending opposite the bottom of the trench and an intrinsic base region extending opposite the sidewall of the trench. The conductivity of the extrinsic base region is greater than the conductivity of the intrinsic base region. The collector region also comprises an extrinsic collector region extending adjacent a face of the semiconductor region and an intrinsic collector region extending between the extrinsic collector region and the intrinsic base region. Like the base region, the conductivity of the extrinsic collector region is greater than the conductivity of the intrinsic collector region. An emitter electrode is also preferably provided. The emitter electrode ohmically contacts the emitter region at a location extending adjacent the sidewall of the trench. A base contact is also provided on the extrinsic base region and extends opposite the bottom of the trench.

REFERENCES:
patent: 5171702 (1992-12-01), Prengle et al.
patent: 5382828 (1995-01-01), Neudeck et al.
patent: 5679966 (1997-10-01), Baliga et al.
patent: 5879967 (1999-03-01), Kim

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