Highly efficient transistor for fast programming of flash memori

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

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438287, 438297, 438263, 257325, 257395, 257321, H01L 21336, H01L 2980, H01L 2976

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active

060906707

ABSTRACT:
In a semiconductor fabrication method for forming a transistor structure upon a semiconductor substrate, a nitride layer is also formed over the semiconductor substrate. A gate oxide layer is formed over a region of the semiconductor substrate. The gate oxide layer has a relatively thinner oxide region over the nitride layer and a relatively thicker oxide region over the substrate adjacent the nitride layer. A transistor gate is formed extending over the relatively thinner oxide region and over the relatively thicker oxide region. The transistor thus formed is therefore asymmetric. A first transistor active region is formed in the vicinity of the relatively thicker oxide region and a second transistor active region is formed in the vicinity of the relatively thinner oxide region. The nitride layer can be formed by rapid thermal nitridization of the semiconductor substrate. The relatively thinner oxide region can be one-half as thick as the relatively thinner oxide region. The surface of the semiconductor substrate can be curved in the vicinity of the drain of the asymmetric transistor in order to permit the momentum of the charge carriers to facilitate penetration of the charge carriers into the gate.

REFERENCES:
patent: 4454524 (1984-06-01), Spence
patent: 4852062 (1989-07-01), Baker et al.
patent: 5278087 (1994-01-01), Jenq
patent: 5310691 (1994-05-01), Suda
patent: 5338954 (1994-08-01), Shimoji
patent: 5362685 (1994-11-01), Gardner et al.
patent: 5376572 (1994-12-01), Yang et al.
patent: 5411911 (1995-05-01), Ikeda et al.
patent: 5432106 (1995-07-01), Hong
patent: 5445983 (1995-08-01), Hong
patent: 5453388 (1995-09-01), Chen et al.
patent: 5459091 (1995-10-01), Hwang
patent: 5550078 (1996-08-01), Sung
patent: 5591652 (1997-01-01), Matsushita
patent: 5897354 (1999-04-01), Kachelmeier
patent: 5918116 (1999-06-01), Chittipeddi
patent: 5930631 (1999-07-01), Wang et al.
Robinson, "Endurance Brightens the Future of Flash", Electronic Component News, Nov. 1988, Reprinted in nonvolatile Semiconductor Memories Technologies, Design and Applications, IEEE Press pp. 167-168.
S. Wolf and R.N. Tauber, Silicon Processing for the VLSI Era, vol. 1, Lattice Press, pp. 57-58 and 210-211, 1986.

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