Highly activated carbon selective epitaxial process for CMOS

Details Highly activated carbon selective epitaxial process for CMOS Highly activated carbon selective epitaxial process for CMOS

2008-03-25

2008-03-25

Kebede, Brook (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S224000, C438S300000, C257SE21430, C257SE21619

Reexamination Certificate

active

11068383

ABSTRACT:
In accordance with the invention there is a method of forming a semiconductor device comprising forming a gate over a substrate, forming a source region and a drain region by doping a first portion and a second portion of active regions adjacent the gate, and forming a first recess in a portion of the source region and a second recess in a portion of the drain region. The method also includes activating the dopants in the source region and the drain region by heating the active regions and depositing a semiconductor material in the first recess and the second recess after activating the dopants in the source region and the drain region.

REFERENCES:
patent: 5956590 (1999-09-01), Hsieh et al.
patent: 5994747 (1999-11-01), Wu
patent: 6187641 (2001-02-01), Rodder et al.
patent: 6946350 (2005-09-01), Lindert et al.
patent: 2004/0248369 (2004-12-01), Wang et al.

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