Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-05-16
1996-10-22
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257344, 257408, 257900, H01L 27088
Patent
active
055679650
ABSTRACT:
In a new high-voltage transistor, a gate electrode is formed on a semiconductor substrate of a first conductivity type by interposing a conductive layer over a gate insulation film. A first impurity region of a first conductivity type having a first impurity concentration is formed on the surface of the lower gate electrode. Second and third impurity regions of a second conductivity type having a second impurity concentration are formed on the substrate with the first impurity region included therebetween. A fourth impurity region having a smaller junction depth than that of the second impurity region, and having a third impurity concentration which is lower than that of the second impurity region is formed between the first impurity region and second impurity region. A fifth impurity region whose junction depth is smaller than that of the second impurity region, and having a third impurity concentration is formed between the first impurity region and second impurity region. Since the intensity of the electric field applied to the drain region is reduced, transistor characteristics are improved. Also, the integration of a semiconductor device is increased by reducing the layout space.
REFERENCES:
patent: 4746624 (1988-05-01), Cham et al.
patent: 4878100 (1989-10-01), McDavid
patent: 5015598 (1991-05-01), Verhaar
patent: 5442215 (1995-08-01), Chae
Mintel William
Samsung Electronics Co,. Ltd.
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