Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-08-09
2011-08-09
Matthews, Colleen A (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S500000, C257SE29268
Reexamination Certificate
active
07994580
ABSTRACT:
A semiconductor device and its method of manufacture are provided. Embodiments include forming a first doped region and a second doped region. The first and second doped regions may form a double diffused drain structure as in an HVMOS transistor. A gate-side boundary of the first doped region underlies part of the gate electrode. The second doped region is formed within the first doped region adjacent the gate electrode. A gate-side boundary of the second doped region is separated from a closest edge of a gate electrode spacer by a first distance. An isolation region-side boundary of the second doped region is separated from a closest edge of a nearest isolation region by a second distance.
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Chen Fu-Hsin
Lin Jui-Wen
Tien William Wei-Yuan
Wu You-Kuo
Matthews Colleen A
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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