High voltage transistor and method for fabricating the same

Details High voltage transistor and method for fabricating the same High voltage transistor and method for fabricating the same

2007-07-24

2007-07-24

Kebede, Brook (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S202000, C438S203000, C257S341000, C257S404000, C257SE21633

Reexamination Certificate

active

11223413

ABSTRACT:
A high voltage transistor operating through a high voltage and a method for fabricating the same are provided. The high voltage transistor includes: an insulation layer on a substrate; an N+-type drain junction region on the insulation layer; an N−-type drain junction region on the N+-type drain junction region; a P−-type body region provided in a trench region of the N−-type drain junction region; a plurality of gate patterns including a gate insulation layer and a gate conductive layer in other trench regions bordered by the P−-type body region and the N−-type drain junction region; a plurality of source regions contacted to a source electrode on the P−-type body region; and a plurality of N+-type drain regions contacted to the N−-type drain junction region and individual drain electrodes.

REFERENCES:
patent: 4814288 (1989-03-01), Kimura et al.

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