Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-09-05
2006-09-05
Toledo, Fernando L. (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S305000, C438S528000, C257S408000, C257SE21427, C257SE21059
Reexamination Certificate
active
07101764
ABSTRACT:
A high-voltage transistor and fabrication process in which the fabrication of the high-voltage transistor can be readily integrated into a conventional CMOS fabrication process. The high-voltage transistor of the invention includes a channel region formed beneath a portion of the gate electrode after the gate electrode has been formed on the surface of a semiconductor substrate. In a preferred embodiment, the channel region is formed by the angled ion implantation of dopant atoms using an edge of the gate electrode as a doping mask. The high-voltage transistor of the invention further includes a drain region that is spaced apart from the channel region by a portion of a well region and by an isolation region residing in the semiconductor substrate. By utilizing the process of the invention to fabricate the high-voltage transistor, the transistor can be integrated into an existing CMOS device with minimal allocation of additional substrate surface area.
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SanDisk 3D LLC
Toledo Fernando L.
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