High voltage switching circuit in a nonvolatile memory

Details High voltage switching circuit in a nonvolatile memory High voltage switching circuit in a nonvolatile memory

1988-03-25

1990-01-09

Gossage, Glenn A.

Static information storage and retrieval

Read/write circuit

Including reference or bias voltage generator

365185, 36523006, 365226, 323313, 323317, 3072966, G11C 700, G05F 316, H03K 301

Patent

active

048932752

ABSTRACT:
A nonvolatile semiconductor memory device includes a power voltage select circuit that is comprised of first and second power source nodes, an output node, first and second depletion type MOS transistors connected in series between the first power source node and the output node, a third MOS transistor connected between an interconnection point between the first and second depletion type MOS transistors and the second power source node, and a fourth MOS transistor connected between the second power source node and the output node.

REFERENCES:
patent: 4365316 (1982-12-01), Iwahashi et al.
patent: 4368524 (1983-01-01), Nakamura et al.
patent: 4565932 (1986-01-01), Kuo et al.
patent: 4733371 (1988-03-01), Terada et al.
Carr et al., "Mos ILSI Design and Application", McGraw-Hill Book Company, New York, pub. 1972, pp. 42-49.
Atsumi et al., "Fast Programmable 256K ROM With On-Chip Test Circuits", IEEE Jour. of Solid State Circuits, vol. SC-20, No. 1, Feb. 1985, pp. 422-427.

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