Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having junction gate
Reexamination Certificate
2011-05-10
2011-05-10
Everhart, Caridad M (Department: 2895)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having junction gate
C438S195000, C257SE21119, C257SE21283, C257S354000, C257S353000
Reexamination Certificate
active
07939395
ABSTRACT:
Structures and methods for integrating a thick oxide high-voltage metal-oxide-semiconductor (MOS) device into a thin oxide silicon-on-insulator (SOI). A method of forming a semiconductor structure includes forming first source and drain regions of a first device below a buried oxide layer of a silicon-on-insulator (SOI) wafer, forming a gate of the first device in a layer of semiconductor material above the buried oxide layer; and forming second source and drain regions of a second device in the layer of semiconductor material above the buried oxide layer.
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Abadeer Wagdi W.
Chatty Kiran V.
Gauthier Jr. Robert J.
Kamal, legal representative Lillian
Rankin Jed H.
Everhart Caridad M
International Business Machines - Corporation
Kotulak Richard
Roberts Mlotkowski Safran & Cole P.C.
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