High-voltage semiconductor device and method for...

Details High-voltage semiconductor device and method for... High-voltage semiconductor device and method for...

2011-05-17

2011-05-17

Hoang, Quoc D (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21630

Reexamination Certificate

active

07943461

ABSTRACT:
A high-voltage semiconductor device and a method for manufacturing the same are disclosed. The disclosed high-voltage semiconductor device includes a semiconductor substrate, a first N type well in the semiconductor substrate, a first P type well in the first N type well, second N type wells in the first N type well along a periphery of the first P type well, a gate insulating film and a gate electrode on the first P type well, and first heavily-doped N type impurity regions in the first P type well at opposite sides of the gate electrode.

REFERENCES:
patent: 7456662 (2008-11-01), Okamura
patent: 7745882 (2010-06-01), Kim
patent: 2008/0283915 (2008-11-01), Jang

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