Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-01-24
2006-01-24
Tran, Minhloan (Department: 2826)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S294000, C438S220000
Reexamination Certificate
active
06989309
ABSTRACT:
A high voltage MOS transistor is provided that is compatible with low-voltage, sub-micron CMOS and BiCMOS processes. The high voltage transistor of the present invention has dopants that are implanted into the substrate prior to formation of the epitaxial layer. The implanted dopants diffuse into the epitaxial layer from the substrate during the formation of the epitaxial layer and subsequent heating steps. The implanted dopants increase the doping concentration in a lower portion of the epitaxial layer. The implanted dopants may diffuse father into the epitaxial layer than dopants in the buried layer forming an up-retro well that prevents vertical punch-through at high operating voltages for thin epitaxial layers. Particularly, a P-type dopant may diffuse farther up into an epitaxial layer than an N-type dopant to form an up-retro well.
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Dickey Thomas L.
Fish & Neave LP Group of Ropes & Gray LLP
Linear Technology Corporation
Morris Robert W.
Mullen Jeffrey D.
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