Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-08-01
2006-08-01
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S527000, C438S137000, C438S138000
Reexamination Certificate
active
07084034
ABSTRACT:
MOS-gated power device including a plurality of elementary functional units, each elementary functional unit including a body region of a first conductivity type formed in a semiconductor material layer of a second conductivity type. A plurality of doped regions of a first conductivity type is formed in the semiconductor material layer, each one of the doped regions being disposed under a respective body region and being separated from other doped regions by portions of the semiconductor material layer.
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Jorgenson Lisa K.
Lebentritt Michael
Morris James H.
Pompey Ron
STMicroelectronics S.r.l.
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