Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-12-06
2005-12-06
Thomas, Tom (Department: 2815)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S291000, C438S527000
Reexamination Certificate
active
06972234
ABSTRACT:
A method of fabricating CMOS devices suitable for high voltage and low voltage applications, while maintaining minimum channel lengths for the devices. In one embodiment, pocket implants (310) are formed in a minimum channel device causing a reverse channel effect. The reverse channel effect is optimized for the minimum channel length of the device. Field implants (120), enhancement implants (130), and wells (140) are all formed using a single mask.
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Liu David K. Y.
Madurawe Raminda U.
Altera Corporation
Richards N. Drew
Townsend and Townsend / and Crew LLP
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