Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-06-27
2006-06-27
Nguyen, Ha (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S199000, C438S218000, C438S529000
Reexamination Certificate
active
07067365
ABSTRACT:
An improved high-voltage process is disclosed. In order to improve the performance in terms of breakdown voltage and to maintain the integrity of the STI structures, the thick gate oxide layer of the high-voltage device area is not etched back before a high-dosage ion doping process. One photo mask is therefore omitted.
REFERENCES:
patent: 6740939 (2004-05-01), Sayama et al.
patent: 2002/0125512 (2002-09-01), Hino et al.
patent: 2005/0164439 (2005-07-01), Takamura
Hsu Wei-Lun
Lee Wen-Fang
Lin Yu-Hsien
Hsu Winston
Lee Cheung
Nguyen Ha
United Microelectronics Corp.
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