High voltage lateral diffused MOSFET device

Details High voltage lateral diffused MOSFET device High voltage lateral diffused MOSFET device

2006-12-19

2006-12-19

Ho, Tu-Tu (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S500000, C257SE29256

Reexamination Certificate

active

07151296

ABSTRACT:
A semiconductor device comprises a substrate. A source active region and a drain active region are disposed in the substrate and spaced from one another in a first dimension. The source active region has a first and a second outline defining a width of the source active region in a second dimension substantially perpendicular to the first dimension. A gate has a third outline and a fourth outline defining a width of the gate not more than the width of the source active region. The gate is disposed between a source in the source active region and a drain in the drain active region and between the first and the second outline. The source has a width not more than the width of the gate. The source is disposed proximate the gate and between the third and the fourth outline.

REFERENCES:
patent: 6252278 (2001-06-01), Hsing
patent: 6518138 (2003-02-01), Hsing
patent: 6573144 (2003-06-01), Takahashi et al.
patent: 2002/0089001 (2002-07-01), Lin
patent: 2005/0170595 (2005-08-01), Li et al.
patent: 2006/0006461 (2006-01-01), Chidambaram

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