High voltage integrated circuit

Details High voltage integrated circuit High voltage integrated circuit

1992-03-23

1999-01-19

Monin, Donald

Active solid-state devices (e.g., transistors, solid-state diode

With means to increase breakdown voltage threshold

In integrated circuit

257547, H01L 2940

Patent

active

058616560

ABSTRACT:
The invention relates to a high voltage integrated circuit with connecting metal conductors (30, 32) connected to ground or potential near ground and covered by a passivating layer (18). The invention is characterized by said passivating layer (18) being partially broken up above said metal conductors to prevent activation of parasitic MOS-transistor.

REFERENCES:
patent: 3611071 (1971-10-01), Augusta
patent: 3665265 (1972-05-01), Fujimoto
patent: 3745428 (1973-07-01), Misawa et al.
patent: 3836998 (1974-09-01), Kocsis et al.
patent: 4011581 (1977-03-01), Kubo et al.
patent: 4423433 (1983-12-01), Imaizumi et al.
patent: 4606998 (1986-08-01), Clodgo et al.
patent: 4825278 (1989-04-01), Hillenius et al.
patent: 4841354 (1989-06-01), Inaba
patent: 4855257 (1989-08-01), Kouda

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