High voltage insulator for preventing instability in an ion...

Details High voltage insulator for preventing instability in an ion... High voltage insulator for preventing instability in an ion...

2007-06-25

2009-11-24

Wells, Nikita (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S492100, C250S492200, C250S492220, C250S492230

Reexamination Certificate

active

07622724

ABSTRACT:
A high voltage insulator for preventing instability in an ion implanter due to triple junction breakdown is described. In one embodiment, there is an apparatus for preventing triple junction instability in an ion implanter. In this embodiment, there is a first metal electrode and a second metal electrode. An insulator is disposed between the first metal electrode and the second metal electrode. The insulator has at least one surface between the first metal electrode and the second metal electrode that is exposed to a vacuum that transports an ion beam generated by the ion implanter. A first conductive layer is located between the first metal electrode and the insulator. The first conductive layer prevents triple junction breakdown from occurring at an interface of the first electrode, insulator and vacuum. A second conductive layer is located between the second metal electrode and the insulator opposite the first conductive layer. The second conductive layer prevents triple junction breakdown from occurring at an interface of the second electrode, insulator and vacuum.

REFERENCES:
patent: 7045798 (2006-05-01), Elsheref et al.
patent: 2004/0256578 (2004-12-01), Mitchell et al.
patent: 2005/0151089 (2005-07-01), Bong et al.
Pillai et al., “Influence of metal-insulator junction on surface flashover in vacuum,” Jun. 1987, pp. 4992-4999, J. Appl. Phys. 61(11), 1987 American Institute of Physics.

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