Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator
Reexamination Certificate
2006-12-19
2006-12-19
Mai, Son (Department: 2827)
Static information storage and retrieval
Read/write circuit
Including reference or bias voltage generator
C365S185180, C365S226000
Reexamination Certificate
active
07151702
ABSTRACT:
High voltage generators include a charge pump and a ripple reduction circuit that includes an integrated discharge path. The ripple reduction circuit limits the voltage level from a charge pump when the charge pump is in a first operating mode and provides a discharge path that from the output terminal of the ripple reduction circuit to the output of the charge pump when the charge pump is in a second operating mode. Semiconductor memories incorporating such high voltage generators are also provided. Coupling circuits having an integrated discharge path are also provided.
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Byeon Dae-Seok
Han Wook-Ghee
Lee Sung-Soo
Lim Young-Ho
Mai Son
Myers Bigel Sibley & Sajovec P.A.
Samsung Electronics Co,. Ltd.
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