High voltage generating circuit for a semiconductor memory circu

Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator

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365226, 3652257, 3072961, 307362, G11C 700

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active

052766462

ABSTRACT:
There is provided a high voltage generating circuit including a circuit for sensing a voltage level of a high voltage for erasing and programming operations, a circuit for generating a given reference voltage, a circuit for comparing the sensed high voltage with the reference voltage, a circuit for applying or blocking a pump signal to a high voltage pump circuit according to the compared signal, a circuit for raising the voltage up to a given level under the control of the pump signal, and an EEPROM fuse circuit connected to the circuit for sensing the voltage level of the high voltage or the circuit for generating the given reference voltage and having stored data, whereby the voltage level of the high voltage finally output may be properly maintained and controlled according to the state of the stored data.

REFERENCES:
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patent: 4825142 (1989-04-01), Wang
patent: 4888738 (1989-12-01), Wong et al.
patent: 4935644 (1990-06-01), Tsujimoto
patent: 4974239 (1990-11-01), Miwada
patent: 5041739 (1991-08-01), Goto
patent: 5059815 (1991-10-01), Bill et al.
patent: 5138190 (1992-08-01), Yamazaki et al.
IEEE ISSS Dig. Tech. Paper, Richard Drori, et al., "A Single 5V Supply Nonvolatile Static RAM", 1981, pp. 148-149.

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