Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-05-01
2007-05-01
Pham, Hoai (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S223000, C438S301000
Reexamination Certificate
active
11124469
ABSTRACT:
Methods and apparatus are provided for a MOSFET (50, 99, 199) exhibiting increased source-drain breakdown voltage (BVdss). Source (S) (70) and drain (D) (76) are spaced apart by a channel (90) underlying a gate (84) and one or more carrier drift spaces (92, 92′) serially located between the channel (90) and the source (70, 70′) or drain (76, 76′). A buried region (96, 96′) of the same conductivity type as the drift space (92, 92′) and the source (70, 70′) or drain (76, 76′) is provided below the drift space (92, 92′), separated therefrom in depth by a narrow gap (94, 94′) and ohmically coupled to the source (70, 70′) or drain (76, 76′). Current flow (110) through the drift space produces a potential difference (Vt) across this gap (94, 94′). As the S-D voltage (Vo) and current (109, Io) increase, this difference (Vt) induces high field conduction between the drift space (92, 92′) and the buried region (96, 96′) and diverts part (112, It) of the S-D current (109, Io) through the buried region (96, 96′) and away from the near surface portions of the drift space (92, 92′) where breakdown generally occurs. Thus, BVdss is increased.
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de Fresart Edouard D.
De Souza Richard J.
Lin Xin
Morrison Jennifer H.
Parris Patrice M.
Freescale Semiconductor Inc.
Ingrassia Fisher & Lorenz
Pham Hoai
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