High-voltage device with improved punch through voltage and...

Details High-voltage device with improved punch through voltage and... High-voltage device with improved punch through voltage and...

2005-04-05

2005-04-05

Eckert, George (Department: 2815)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S217000, C438S289000, C438S519000, C438S301000, C438S303000, C438S305000, C438S306000, C257S391000, C257S392000, C257S408000, C257S500000

Reexamination Certificate

active

06875658

ABSTRACT:
A high-voltage device with improved punch through voltage. A semiconductor silicon substrate has a high-voltage device region on which a gate structure is patterned. A lightly doped region is formed in the substrate and lateral to the gate structure. A spacer is formed on the sidewall of the gate structure. A heavily doped region is formed in the lightly doped region and lateral to the spacer. A lateral distance is kept between the spacer and the heavily doped region.

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