High voltage device having polysilicon region in trench and...

Details High voltage device having polysilicon region in trench and... High voltage device having polysilicon region in trench and...

2007-11-27

2007-11-27

Whitehead, Jr., Carl (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29256, C257SE29257, C257SE21417, C257SE21418, C438S140000

Reexamination Certificate

active

10767203

ABSTRACT:
A high voltage device prevents or minimizes the lowering of a maximum operating voltage range. Bulk resistances of the drift regions are reduced by forming trenches within the drift regions and filling the trenches with conductive polysilicon layers. The polysilicon layers reduce the bulk resistances and prevents or minimizes the operation of parasitic bipolar junction transistors typically formed when the high voltage device is manufactured.

REFERENCES:
patent: 5640034 (1997-06-01), Malhi
patent: 5869875 (1999-02-01), Hebert
patent: 6258674 (2001-07-01), Kwon et al.

Affiliated with

Also associated with

Rating

High voltage device having polysilicon region in trench and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High voltage device having polysilicon region in trench and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High voltage device having polysilicon region in trench and... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3848848