Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-05-23
2010-06-08
Tsai, H. Jey (Department: 2895)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S244000, C438S386000, C257SE27092
Reexamination Certificate
active
07732274
ABSTRACT:
A semiconductor process and apparatus provide a high voltage deep trench capacitor structure (10) that is integrated in an integrated circuit, alone or in alignment with a fringe capacitor (5). The deep trench capacitor structure is constructed from a first capacitor plate (4) that is formed from a doped n-type SOI semiconductor layer (e.g.,4a-c). The second capacitor plate (3) is formed from a doped p-type polysilicon layer (3a) that is tied to the underlying substrate (1).
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Bose Amitava
Khemka Vishnu
Roggenbauer Todd C.
Zhu Ronghua
Cannatti Michael Rocco
Freescale Semiconductor Inc.
Hamilton & Terrile LLP
Tsai H. Jey
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