High-voltage CMOS-compatible capacitors

Details High-voltage CMOS-compatible capacitors High-voltage CMOS-compatible capacitors

2007-08-28

2007-08-28

Kebede, Brook (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S241000, C438S396000, C257SE21008, C257SE21653

Reexamination Certificate

active

11326243

ABSTRACT:
A high-voltage stacked capacitor includes a first capacitor and a second capacitor. Each capacitor includes a first plate having a first semiconductive body and a second plate having a floating electrode. The first and second semiconductive bodies are electrically isolated from each other. The floating electrode includes an intercapacitor node configured to self-adjust to a value less than a working voltage impressed on the stacked capacitor.

REFERENCES:
patent: 6124163 (2000-09-01), Shirley et al.
patent: 6157054 (2000-12-01), Caser et al.
patent: 6222245 (2001-04-01), Bez et al.
patent: 7042701 (2006-05-01), Diorio et al.

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