Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-12-21
2009-08-25
Tsai, H. Jey (Department: 2895)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S309000, C438S341000, C257SE27109
Reexamination Certificate
active
07579230
ABSTRACT:
A high voltage BICMOS device and a method for manufacturing the same, which may improve the reliability of the device by securing a distance between adjacent DUF regions, are provided. The high voltage BICOMOS device includes: a reverse diffusion under field (DUF) region formed by patterning a predetermined region of a semiconductor substrate; a diffusion under field (DUF) region formed in the substrate adjacent to the reverse DUF region; a spacer formed at a sidewall of the reverse DUF region; an epitaxial layer formed on an entire surface of the substrate; and a well region formed in contact with the DUF region.
REFERENCES:
patent: 4290831 (1981-09-01), Ports et al.
patent: 4624047 (1986-11-01), Tani
patent: 4979010 (1990-12-01), Brighton
Dongbu Electronics Co. Ltd.
Fortney Andrew D.
Strohl Duangkamol Kay
The Law Offices of Andrew D. Fortney
Tsai H. Jey
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