High throughput A1-Cu thin film sputtering process on small cont

Details High throughput A1-Cu thin film sputtering process on small cont High throughput A1-Cu thin film sputtering process on small cont

1998-04-21

2000-10-31

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438622, 438625, 438627, 438628, 438642, 438643, 438644, 438688, H01L 214763, H01L 2144

Patent

active

061402362

ABSTRACT:
A metal interconnect layer that fills in a via hole formed by first depositing a first Al--Cu film on the sidewalls of the via hole at a low temperature and a low sputtering power and then depositing a second Al--Cu film on the first Al--Cu film at a high temperature and high sputtering power. Sputtering is performed in two steps at low and high temperatures within the same sputtering chamber. The deposition at low temperature and low sputtering power provides good coverage in the via hole, and the deposition at high temperature and high sputtering power reduces the process time.

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