Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Multiple layers
Patent
1996-06-06
1997-05-27
Kunemund, Robert
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Multiple layers
438954, H01L 2144, H01L 2102
Patent
active
056332025
ABSTRACT:
An insulating layer in a semiconductor device and a process for forming the insulating layer is described. The insulating layer comprises of a nitride layer over the substrate having a residual stress of between -8.times.10.sup.9 dynes/cm.sup.-2 and -3.times.10.sup.10 dynes/cm.sup.-2. The insulating layer can further comprise a doped oxide layer under the nitride layer and can further comprise an interlevel dielectric layer over the nitride layer. Moreover, the nitride layer can be formed by bringing the temperature in a chemical vapor deposition reactor to below 550 degrees Celsius, placing the substrate into the reactor at the temperature, and forming the nitride layer on the substrate. Alternatively, the nitride layer can be formed by pushing the substrate into a chemical vapor deposition reactor at a speed greater than 300 millimeters per minute, and forming the nitride layer on the substrate.
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Brigham Lawrence N.
Chau Robert S.
Cotner Raymond E.
Lee Yung-Huei
Intel Corporation
Kunemund Robert
Whipple Matthew
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