High temperature post exposure baking treatment for positive pho

Details High temperature post exposure baking treatment for positive pho High temperature post exposure baking treatment for positive pho

1986-10-17

1989-12-05

Bowers, Jr., Charles L.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

430192, 430330, G03F 726

Patent

active

048852325

ABSTRACT:
The invention provides a method for producing a photographic element which comprises coating a substrate with a positive working photosensitive composition which composition comprises an aqueous alkali soluble resin, a quinone diazide photosensitizer and a solvent composition, heat treating said coated substrate at a temperature of from about 20.degree. C. to about 100.degree. C. until substantially all of said solvent composition is removed; imagewise exposing said photosensitive composition to actinic radiation; baking said coated substrate at a temperature of from about 120.degree. C. to about 160.degree. C. for from about 15 seconds to about 90 seconds; and removing the exposed non-image areas of said composition with a suitable developer.

REFERENCES:
patent: 3046121 (1962-07-01), Schmidt
patent: 4015986 (1977-04-01), Paal et al.
patent: 4104070 (1976-05-01), Moritz et al.
patent: 4241165 (1980-12-01), Hughes et al.
patent: 4439516 (1984-03-01), Cernigliaro et al.
patent: 4573782 (1986-03-01), Kobayashi et al.
patent: 4576901 (1986-03-01), Stahlhofen et al.
Kaplan, L. H., "Exposure time reduction for positive photoresists", IBM Technical Disclosure Bulletin, vol. 13, No. 2, Jul. 1970.
Jinno et al., "Baking Characteristics of Positive Photoresists"--Photographic Science & Engineering, vol. 21, #5, Sep./Oct. 1977.
Batchelder, T. et al., "Bake Effects in Positive Photoresist"--Solid State Technology--vol. 26 (1983), Aug., #8, pp. 211-217.
Perness et al., "Baking Photoresist to Improve Adhesion"--IBM Technical Disclosure Bulletin--vol. 24, No. 1A, Jun. 1981.
Bergin et al., "Single Layer Optical Lift-Off Process"-IBM Technical Disclosure Bulletin-vol. 18, No. 5, Oct., 1975, p. 1395.
IBM Technical Disclosure Bulletin, vol. 16, No. 1, 6/1973, p. 47.
Kaplan, L. H., IBM Tech. Discl. Bulletin, vol. 13, No. 2, p. 530, 1970.
Bickford, H. G. et al., IBM Tech. Discl Bulletin, vol. 16, No. 1, p. 47, 6/1973.
Walker, E. J., IEEE Trans. on Electron Devices, vol. 22, ed. 22, No. 7, pp. 464-466, 7/1975.
Allen, R., et al., Accelerated Brief Communications, 6/1982, pp. 1379-1381.
Dill, F. H., et al., IBM Journal of Research and Development, vol. 21, No. 3, pp. 210-218, 5/1977.
DeForest, W. S., "Photoresist Materials and Processes", McGraw-Hill Book Co., 1975, pp. 102, 128, 147-149, & 159-162.
Kaplon, L. H., IBM Tech. Discl. Bulletin, vol. 13, No. 2, p. 530, 1970.
Walker, E. J., IEEE Trans. or Electron Devices, vol. 22, ed. 22, No. 7, pp. 464-466, 7/1975.

Affiliated with

Also associated with

Rating

High temperature post exposure baking treatment for positive pho does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High temperature post exposure baking treatment for positive pho, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High temperature post exposure baking treatment for positive pho will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2034059