High stress nitride film and method for formation thereof

Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of...

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C257SE21247

Reexamination Certificate

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07629267

ABSTRACT:
A silicon nitride film is formed on a substrate in a reaction chamber by introducing trisilane and a reactive nitrogen species into the chamber in separate pulses. A carbon precursor gas is also flowed into the chamber during introduction of the trisilane and/or during introduction of the reactive nitrogen species, or in pulses separate from the trisilane and reactive nitrogen species pulses. The carbon is used as a dopant in the silicon nitride film and advantageously allows a high stress silicon nitride film to be formed.

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