Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of...
Reexamination Certificate
2006-03-06
2009-12-08
Rose, Kiesha L. (Department: 2891)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
C257SE21247
Reexamination Certificate
active
07629267
ABSTRACT:
A silicon nitride film is formed on a substrate in a reaction chamber by introducing trisilane and a reactive nitrogen species into the chamber in separate pulses. A carbon precursor gas is also flowed into the chamber during introduction of the trisilane and/or during introduction of the reactive nitrogen species, or in pulses separate from the trisilane and reactive nitrogen species pulses. The carbon is used as a dopant in the silicon nitride film and advantageously allows a high stress silicon nitride film to be formed.
REFERENCES:
patent: 4188444 (1980-02-01), Landau
patent: 4262631 (1981-04-01), Kubacki
patent: 4277320 (1981-07-01), Beguwala et al.
patent: 4298629 (1981-11-01), Nozaki et al.
patent: 4363828 (1982-12-01), Brodsky et al.
patent: 4495218 (1985-01-01), Azuma et al.
patent: 4585671 (1986-04-01), Kitagawa et al.
patent: 4610859 (1986-09-01), Miyagawa et al.
patent: 4684542 (1987-08-01), Jasinski et al.
patent: 4715937 (1987-12-01), Moslehi et al.
patent: 4720395 (1988-01-01), Foster
patent: 4828224 (1989-05-01), Crabb et al.
patent: 4834020 (1989-05-01), Bartholomew
patent: 4851095 (1989-07-01), Scobey et al.
patent: 4855254 (1989-08-01), Eshita et al.
patent: 4891103 (1990-01-01), Zorinsky et al.
patent: 5111266 (1992-05-01), Furumura et al.
patent: 5214002 (1993-05-01), Hayashi et al.
patent: 5221556 (1993-06-01), Hawkins et al.
patent: 5227329 (1993-07-01), Kobayashi et al.
patent: 5287205 (1994-02-01), Yamazaki et al.
patent: 5356673 (1994-10-01), Schmitt et al.
patent: 5356821 (1994-10-01), Naruse et al.
patent: 5389398 (1995-02-01), Suzuki et al.
patent: 5389570 (1995-02-01), Shiozawa
patent: 5453858 (1995-09-01), Yamazaki
patent: 5471330 (1995-11-01), Sarma
patent: 5591494 (1997-01-01), Sato et al.
patent: 5607724 (1997-03-01), Beinglass et al.
patent: 5614257 (1997-03-01), Beinglass et al.
patent: 5648293 (1997-07-01), Hayama et al.
patent: 5656531 (1997-08-01), Thakur et al.
patent: 5695819 (1997-12-01), Beinglass et al.
patent: 5698771 (1997-12-01), Shields et al.
patent: 5700520 (1997-12-01), Beinglass et al.
patent: 5786027 (1998-07-01), Rolfson
patent: 5789030 (1998-08-01), Rolfson
patent: 5837580 (1998-11-01), Thakur et al.
patent: 5849601 (1998-12-01), Yamazaki
patent: 5874129 (1999-02-01), Beinglass et al.
patent: 5876797 (1999-03-01), Beinglass et al.
patent: 5885869 (1999-03-01), Turner et al.
patent: 5907792 (1999-05-01), Droopad et al.
patent: 5916365 (1999-06-01), Sherman
patent: 5959326 (1999-09-01), Aiso et al.
patent: 6015590 (2000-01-01), Suntola et al.
patent: 6027705 (2000-02-01), Kitsuno et al.
patent: 6056823 (2000-05-01), Sajoto et al.
patent: 6083810 (2000-07-01), Obeng et al.
patent: 6087229 (2000-07-01), Aronoqitz et al.
patent: 6103600 (2000-08-01), Ueda et al.
patent: 6136654 (2000-10-01), Kraft et al.
patent: 6159828 (2000-12-01), Ping et al.
patent: 6161498 (2000-12-01), Toraguchi et al.
patent: 6171662 (2001-01-01), Nakao
patent: 6197669 (2001-03-01), Twu et al.
patent: 6197694 (2001-03-01), Beinglass
patent: 6200893 (2001-03-01), Sneh
patent: 6207585 (2001-03-01), Hasegawa et al.
patent: 6228181 (2001-05-01), Yamamoto et al.
patent: 6252295 (2001-06-01), Cote et al.
patent: 6271054 (2001-08-01), Ballantine et al.
patent: 6294399 (2001-09-01), Fukumi et al.
patent: 6326311 (2001-12-01), Ueda et al.
patent: 6373112 (2002-04-01), Murthy et al.
patent: 6385020 (2002-05-01), Shin et al.
patent: 6391803 (2002-05-01), Kim et al.
patent: 6455892 (2002-09-01), Okuno et al.
patent: 6468924 (2002-10-01), Lee et al.
patent: 6503846 (2003-01-01), Niimi et al.
patent: 6528530 (2003-03-01), Zeitlin et al.
patent: 6537910 (2003-03-01), Burke et al.
patent: 6551893 (2003-04-01), Zheng et al.
patent: 6589868 (2003-07-01), Rossman
patent: 6613695 (2003-09-01), Pomarede et al.
patent: 6638879 (2003-10-01), Hsich et al.
patent: 6821825 (2004-11-01), Todd et al.
patent: 6824816 (2004-11-01), Aaltonen et al.
patent: 6962859 (2005-11-01), Todd et al.
patent: 7005392 (2006-02-01), Baum et al.
patent: 7125582 (2006-10-01), McSwiney et al.
patent: 7172792 (2007-02-01), Wang et al.
patent: 7192626 (2007-03-01), Dussarrat et al.
patent: 2001/0032986 (2001-10-01), Miyasaka
patent: 2002/0047151 (2002-04-01), Kim et al.
patent: 2002/0073925 (2002-06-01), Noble et al.
patent: 2002/0098627 (2002-07-01), Pomarede et al.
patent: 2002/0160605 (2002-10-01), Kanzawa et al.
patent: 2002/0168868 (2002-11-01), Todd
patent: 2002/0197831 (2002-12-01), Todd et al.
patent: 2003/0022528 (2003-01-01), Todd
patent: 2003/0059535 (2003-03-01), Luo et al.
patent: 2003/0082300 (2003-05-01), Todd et al.
patent: 2004/0096582 (2004-05-01), Wang et al.
patent: 2005/0064684 (2005-03-01), Todd et al.
patent: 2005/0079692 (2005-04-01), Samoilov et al.
patent: 2005/0080286 (2005-04-01), Wang et al.
patent: 2005/0118837 (2005-06-01), Todd et al.
patent: 2005/0184397 (2005-08-01), Gates et al.
patent: 2005/0247986 (2005-11-01), Ko et al.
patent: 2005/0250302 (2005-11-01), Todd et al.
patent: 2006/0019032 (2006-01-01), Wang et al.
patent: 2006/0084283 (2006-04-01), Paranjpe et al.
patent: 2006/0088985 (2006-04-01), Haverkort et al.
patent: 2006/0172556 (2006-08-01), Bather et al.
patent: 0 368 651 (1990-05-01), None
patent: 0 486 047 (1992-05-01), None
patent: 0 747 974 (1996-12-01), None
patent: 1 065 728 (2001-01-01), None
patent: 2 298 313 (1996-08-01), None
patent: 2 332 564 (1999-06-01), None
patent: 57209810 (1982-12-01), None
patent: 59078918 (1984-05-01), None
patent: 59078919 (1984-05-01), None
patent: 60043485 (1985-03-01), None
patent: 60043485 (1985-03-01), None
patent: 61-095535 (1986-05-01), None
patent: 61153277 (1986-07-01), None
patent: 62076612 (1987-04-01), None
patent: 63003414 (1988-01-01), None
patent: 63003463 (1988-01-01), None
patent: 01-179710 (1989-07-01), None
patent: 1217956 (1989-08-01), None
patent: 1268064 (1989-10-01), None
patent: 2155225 (1990-06-01), None
patent: 03-091239 (1991-04-01), None
patent: 3091239 (1991-04-01), None
patent: 3185817 (1991-08-01), None
patent: 3187215 (1991-08-01), None
patent: 3292741 (1991-12-01), None
patent: 4323834 (1992-11-01), None
patent: 5021378 (1993-01-01), None
patent: 05-062811 (1993-03-01), None
patent: 05-062911 (1993-03-01), None
patent: 5062911 (1993-03-01), None
patent: 7249618 (1995-09-01), None
patent: 8242006 (1996-09-01), None
patent: 11317530 (1999-11-01), None
patent: 2000-100811 (2000-04-01), None
patent: WO 02/43115 (2002-05-01), None
patent: WO 02/064853 (2002-08-01), None
patent: WO 2004/009861 (2004-01-01), None
patent: WO 2004009861 (2004-01-01), None
Ikoma et al., Growth of Si/3C-SiC/Si(100) hetrostructures by pulsed supersonic free jets, Applied Physics Letters, vol. 75, No. 25, pp. 3977-3979, Dec. 1999.
International Search Report dated Nov. 13, 2003 for international patent application No. PCTUS02/02921, filed on Feb. 1, 2002.
lyer, R. Suryanarayanan et al., “A process Method of Silicon Nitride Atomic layer Cyclic deposition,” Semicon Taiwan 2001, pp. 17-25.
Olivares, J. et al., “Solid-phase crystallization of amorphouse SiGe films deposed by LPCVD on SiOs and glass,” Thin Solid Films 337 (1999), pp. 51-54.
Sze, VLSI Technology, “Arrhenius plot for polysilicon deposition for different silane partial pressures,” (1988) pp. 240-241.
International Search Report and Written Opinion for International Application No. PCT/US2006/047805. May 8, 2007.
Ishihara et al., “Low-temperature chemical-vapor-deposition of silicon-nitride from tetra-silane and hydrogen azide,”Materials Research Society Symposium Proceedings, vol. 284, p. 3-8 (1993).
Kanoh et al., “Low-temperature chemical-vapor-deposition of silicon nitride,”Journal de Physique IV, vol. 2, p. C2-831-C2-837 (1991).
Yeh et al., “Low-temperature chemical-vapor-deposition of silicon-nitride film from hexachloro-disilane and hydrazine,”Jpn. J. Appl. Phys. vol. 35, Part 1, No. 2B, p. 1509-1512 (Feb. 1996).
de Blank Rene
Maes Jan Willem
Wan Yuet Mei
Anya Igwe U
ASM International N.V.
Knobbe Martens Olson & Bear LLP
Rose Kiesha L.
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