High stress diamond like carbon film

Details High stress diamond like carbon film High stress diamond like carbon film

2008-09-19

2009-12-08

Chen, Jack (Department: 2893)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S197000, C257SE21001

Reexamination Certificate

active

07629271

ABSTRACT:
A method for forming a compressive film over a field effect transistor over a substrate is provided. The field effect transistor includes a channel region between a drain and a source within the substrate. The channel region is controlled by a gate electrode. The method includes depositing a diamond-like carbon (DLC) film over the field effect transistor to compress the channel region by generating a plasma of a processing gas including a precursor gas and an additive gas, wherein the precursor substantially includes only C2H2and the additive gas includes Ar.

REFERENCES:
patent: 2007/0032024 (2007-02-01), Peidous et al.
Tan et al., “A High-Stress Liner Comprising Diamond-Like Carbon (DLC) for Strained p-Channel MOSFET,”IEEE Electron Device Letters, 29:2, Feb. 2008.

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