High-speed write type nonvolatile semiconductor memory

Details High-speed write type nonvolatile semiconductor memory High-speed write type nonvolatile semiconductor memory

1987-09-15

1990-01-30

Fears, Terrell W.

Static information storage and retrieval

Systems using particular element

Resistive

365154, 36523006, 357 231, G11C 1140

Patent

active

048978159

ABSTRACT:
A nonvolatile semiconductor memory of this invention is obtained by dividing a memory cell array in which EPROM cells are provided in a matrix form and a write circuit into a plurality of blocks, commonly connecting sources of cell transistors in each block of the memory cell array, and connecting the common source of each block to a ground node through a corresponding resistive component.

REFERENCES:
patent: 3618052 (1971-11-01), Kwei
IBM Tech. Dis. Bul., vol. 17, No. 11, Apr. 1975, "Programable Memory Circuits", I. T. Ho et al, p. 3279.
Japanese Patent Disclosure (Kokai) No. 59-77700, M. Momodomi et al., May 4, 1984.

Affiliated with

Also associated with

Rating

High-speed write type nonvolatile semiconductor memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High-speed write type nonvolatile semiconductor memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High-speed write type nonvolatile semiconductor memory will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1927848