Static information storage and retrieval – Read/write circuit – Differential sensing
Reexamination Certificate
2007-10-23
2007-10-23
Nguyen, Tan T. (Department: 2827)
Static information storage and retrieval
Read/write circuit
Differential sensing
C365S158000, C365S189070, C365S210130
Reexamination Certificate
active
11379854
ABSTRACT:
A method and circuits are disclosed for sensing an output of a memory cell having high and low resistance states. A high reference cell is in high resistance state and a low reference cell is in low resistance state. The resistance of the high reference cell in high resistance state has a first margin of difference from the resistance of the memory cell in high resistance state. The resistance of the low reference cell in low resistance state has a second margin of difference from the resistance of the memory cell in low resistance state. Differential amplifiers coupled to the memory cell and the high and low reference cells provide a digital output representing the resistance state of the memory cell.
REFERENCES:
patent: 6469929 (2002-10-01), Kushnarenko et al.
patent: 6490192 (2002-12-01), Thewes et al.
patent: 6600690 (2003-07-01), Nahas et al.
patent: 6665216 (2003-12-01), Ho et al.
patent: 6845052 (2005-01-01), Ho et al.
patent: 6940744 (2005-09-01), Rinerson et al.
patent: 7203112 (2007-04-01), Liaw
patent: 2005/0105375 (2005-05-01), Iwata
H.S. Jeong, G.T. Jeong, G.H. Koh, et al., Fully Integrated 64Kb MRAM with Novel Reference Cell Scheme, Advanced Technology Development and Process Development Team, Samsung Advanced Institute of Technology, IEEE 2002.
Peter K. Naji, Mark Durlam, Saied Tehrani, John Calder and Mark F. DeHerrera, A 256kb 3.0V 1T1MTJ Nonvolatile Magnetoresistive RAM, International Solid-State Circuits Conference, IEEE 2001.
Liaw Jhon Jhy
Tang Denny
Baker & McKenzie LLP
Nguyen Tan T.
Taiwan Semiconductor Manufacturing Company , Ltd.
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