High-speed rotational vapor deposition apparatus and high-speed

Details High-speed rotational vapor deposition apparatus and high-speed High-speed rotational vapor deposition apparatus and high-speed

1998-08-20

2000-09-05

Thibodeau, Paul

Coating apparatus

Gas or vapor deposition

Work support

118715, C23C 1600

Patent

active

061137057

ABSTRACT:
There is provided a vapor deposition apparatus for forming a thin film which includes plural reaction gas supply ports at the top portion of a hollow reactor, an exhaust port at the bottom of the reactor, a rotational substrate holder provided inside the reactor on which a wafer substrate is mounted. A straightening vane having plural gas holes formed therein is provided on an upper portion of the reactor. The reactor is partitioned into upper and lower portions which have different inside diameters, with the inner diameter of the upper portion being smaller than the inner diameter of lower portion. The lower end of the upper portion and the upper end of the lower portion are linked by a linking portion which has a predetermined shape to make continuous the hollow inside of the reactor. A thin film is formed on the surface of a wafer substrate, which is placed on the rotational substrate holder, by supplying a reaction gas into the reactor.

REFERENCES:
patent: 5264040 (1993-11-01), Geyling
patent: 5792272 (1998-08-01), van Os et al.
Design and Applications of Large Area RDRs, G.S. Tompa et al, Emcore Research Laboratories, III-Vs Review, vol. 7 No. 3.
Patent Abstract of Japan, Sato Hirosuke, Vapor Growth Device, Pub. No. 5-74710, Pub. Date Mar. 36, 1993.
Patent Abstract of Japan, Toishimitsu et al., Vapor Growth Method, Pub. No. 5-90167, Pub. Date Apr. 9, 1993.
Patent Abstract of Japan, Keichi et al., Vapor Growth Device, Pub. No. 6-216045, Pub. Date Aug. 5, 1994.
Patent Abstract of Japan, Sato Hirosuke, Vapor Growth Equipment, Pub. No. 7-50260, Pub. Date Feb. 21, 1995.

Affiliated with

Also associated with

Rating

High-speed rotational vapor deposition apparatus and high-speed does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High-speed rotational vapor deposition apparatus and high-speed , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High-speed rotational vapor deposition apparatus and high-speed will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2208061