High speed MOS-technology power device integrated structure, and

Details High speed MOS-technology power device integrated structure, and High speed MOS-technology power device integrated structure, and

1997-03-04

1999-08-03

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438273, 438520, H01L 218236, H01L 21265

Patent

active

059337346

ABSTRACT:
A high-speed MOS-technology power device integrated structure includes a plurality of elementary functional units formed in a lightly doped semiconductor layer of a first conductivity type, the elementary functional units including channel regions of a second conductivity type covered by a conductive insulated gate layer including a polysilicon layer; the conductive insulated gate layer also including a highly conductive layer superimposed over the polysilicon layer and having a resistivity much lower than the resistivity of the polysilicon layer, so that a resistance introduced by the polysilicon layer is shunted with a resistance introduced by the highly conductive layer and the overall resistivity of the insulated gate layer is lowered.

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