High speed, low voltage non-volatile memory

Details High speed, low voltage non-volatile memory High speed, low voltage non-volatile memory

1995-08-04

1996-12-24

Fears, Terrell W.

Static information storage and retrieval

Read/write circuit

Precharge

365226, G11C 1300

Patent

active

055879519

ABSTRACT:
A low voltage EPROM which increases its reading speed by charging a word line to a voltage higher than vcc during a read operation. Two voltage pumps, which alternately place charge on a word line, receive control signals of opposite phase from a temperature insensitive oscillator. The voltage from the two voltage pumps passes through a zero threshold voltage n-type pass device to a word line. The zero threshold voltage n-type pass device receives its control signal from a third voltage pump. In order to make the low voltage EPROM compatible with standard 5V programmers, each output driving circuit consists of a large output driver used under low voltage V.sub.cc conditions and a smaller output driver used under standard 5V V.sub.cc conditions.

REFERENCES:
patent: 5168466 (1992-12-01), Kuo et al.
patent: 5226013 (1993-07-01), Secol et al.
patent: 5331295 (1994-07-01), Jelinek et al.
patent: 5367206 (1994-11-01), Yu et al.
Article entitled "ASICs spreading throughout system design", Electronic Engineering Times, May 10, 1993, pp. 54 & 58.

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