High speed lateral heterojunction MISFETS realized by...

Details High speed lateral heterojunction MISFETS realized by... High speed lateral heterojunction MISFETS realized by...

2005-06-22

2009-08-04

Dickey, Thomas L (Department: 2826)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

C257S018000, C257S019000, C257S020000

Reexamination Certificate

active

07569442

ABSTRACT:
A method for forming and the structure of a strained lateral channel of a field effect transistor, a field effect transistor and CMOS circuitry is described incorporating a drain, body and source region on a single crystal semiconductor substrate wherein a hetero-junction is formed between the source and body of the transistor, wherein the source region and channel are independently lattice strained with respect the body region. The invention reduces the problem of leakage current from the source region via the hetero-junction and lattice strain while independently permitting lattice strain in the channel region for increased mobility via choice of the semiconductor materials and alloy composition.

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