High-speed disturb testing method and word line decoder in semic

Details High-speed disturb testing method and word line decoder in semic High-speed disturb testing method and word line decoder in semic

1996-12-24

1999-01-05

Beausoliel, Jr., Robert W.

Excavating

365201, G11C 2900

Patent

active

058569820

ABSTRACT:
A high-speed disturb testing method for a semiconductor memory device is disclosed, includes the steps of: (a) writing first piece of data in all of the memory cells in the memory cell array; (b) reading and confirming the first piece data written in each memory cell of the memory cell array; (c) writing second piece data in all of the memory cells connected to the plurality of disturb word lines; (d) reading and confirming the second piece data from all of the memory cells (e) fixing the mode of the disturb word line to the test mode; (f) repeatedly writing the second piece data in all of the memory cells connected to the plurality of disturb word lines; (g) changing the test mode to the normal mode; (h) refreshing all of the memory cells; (i) reading and confirming the first piece data from a word line located close to the selected plurality of disturb word lines; (j) writing the first piece data in all of memory cells connected to the plurality of disturb word lines; (k) repeating the steps (3) to (10), to thereby apply disturb to all of the word lines one by one; and (l) reading and confirming the first piece data from the memory cell array.

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