High selectivity slurry for shallow trench isolation processing

Details High selectivity slurry for shallow trench isolation processing High selectivity slurry for shallow trench isolation processing

1998-01-08

2000-02-01

Marcheschi, Michael

Abrasive tool making process, material, or composition

With inorganic material

Clay, silica, or silicate

252 795, 106 3, 438693, 51309, B24B 100

Patent

active

060198060

ABSTRACT:
This invention is for an improved slurry for shallow trench isolation processing in chemical mechanical polishing of semiconductor devices. The oxide
itride selectivity is enhanced by increasing the pH of the slurry, increasing the solids content of the slurry and/or by adding a fluoride salt to the slurry. With these modifications, selectivity of greater than 10:1 can be attained.

REFERENCES:
patent: 4549374 (1985-10-01), Basi et al.
patent: 4874463 (1989-10-01), Kose et al.
patent: 5571373 (1996-11-01), Krishna et al.
patent: 5626715 (1997-05-01), Rostoker
B. Holley, "Semiconductor Polishing Composition," IBM Technical Disclosure Bulletin, vol. 23, No. 7A, 1980, p. 2750 (no month).

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