High selectivity etching stop layer for damascene process

Details High selectivity etching stop layer for damascene process High selectivity etching stop layer for damascene process

1998-04-28

2000-05-16

Bueker, Richard

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438723, 438740, 216 74, H01L 21304, H01L 21461, B24B 100

Patent

active

060637110

ABSTRACT:
A high selectivity etch-stop layer comprising oxynitride is disclosed for forming damascene structures in the manufacturing of semiconductor substrates. Because of its relatively high selectivity to oxides, the oxynitride etch-stop can be made thinner than the conventionally used nitride layer. Therefore, the disclosed oxynitride etch-stop layer makes it possible to avoid the cracking problems of thicker etch-stop layers as well as the associated problems of poor definition of contact or via holes in the damascene structure.

REFERENCES:
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patent: 5612254 (1997-03-01), Mu et al.
patent: 5622596 (1997-04-01), Armacost et al.
patent: 5635423 (1997-06-01), Huang et al.
patent: 5652182 (1997-07-01), Cleeves

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