High resolution lithography using protons or alpha particles

Details High resolution lithography using protons or alpha particles High resolution lithography using protons or alpha particles

1981-04-06

1982-11-02

Kittle, John E.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

430322, 2504921, 2504922, A61K 2702, G03F 500

Patent

active

043574173

ABSTRACT:
A method of lithographically forming a pattern on a surface is disclosed. The surface on which the pattern is to be formed is first coated with a resist layer. A mask preferably consisting of a beryllium of foil and a pattern gold layer affixed thereto is then positioned in overlying relationship to the resist layer. The thickness of the beryllium foil is selected such that it is transparent to high energy particles of a preselected energy while the combination of the pattern gold areas and the beryllium foil is impervious to these particles. A flood beam of high energy particles is directed such that it impinges on the beryllium foil thereby exposing the resist in areas not protected by the combination of the beryllium foil and the gold. The resist layer is processed to produce a patterned layer.

REFERENCES:
patent: 4004997 (1977-01-01), Tsukamoto et al.
patent: 4158141 (1979-06-01), Seliger et al.
patent: 4282437 (1981-08-01), Boie

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