High resolution lithographic resist and method

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Electron beam imaging

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

430270, 430311, 430313, 430322, 430323, 430325, 430329, 430967, G03F 710, G03G 516

Patent

active

045488932

ABSTRACT:
A negative working resist composition and medium for microlithographic recording comprises a vinyl polymer having aromatic quaternized nitrogen-containing pendant groups. The resist undergoes a transformation from high to low solubility in polar solvents such as water or low molecular weight alcohols upon exposure to electron beams, ultraviolet light, or X-rays. A method for patterning substrates by employing the resist composition is also disclosed.

REFERENCES:
patent: 2732350 (1956-01-01), Clarke
patent: 3682939 (1972-08-01), Webster
patent: 3936429 (1976-02-01), Seoka et al.
patent: 4046766 (1977-09-01), Costin
patent: 4109068 (1978-08-01), Allen
patent: 4237208 (1980-12-01), Desai et al.
patent: 4307182 (1981-12-01), Dalzell et al.
patent: 4322489 (1982-03-01), Land et al.
patent: 4430419 (1984-02-01), Harada
patent: 4439514 (1984-03-01), Garito
patent: 4456678 (1984-06-01), Lee et al.
Broers et al., "250A Linewidths with PMMA Electron Resist", Appl. Phys. Lett., 33 (5):1, 1978, pp. 392-394.
Ohnishi, "Poly(vinylnaphthalene) and Its Derivatives as E-Beam Negative Resist", J. Vac. Sci. Technol., 19 (4), 1981.
Bowden et al., "Resist Materials for Fine Line Lithography", Solid State Technology, 22 (5), pp. 72-82, 1979 (May).
"Bell Claims X-Ray Litho MOS `Will Blow GaAs Out of Water`", The Institute, vol. 5 (3), Mar. 1981.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

High resolution lithographic resist and method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High resolution lithographic resist and method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High resolution lithographic resist and method will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-122121

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.