Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Electron beam imaging
Patent
1987-03-23
1988-09-20
Dees, Jose' G.
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Electron beam imaging
430314, 430317, 430323, 430329, 430942, 156628, 437931, G03C 500
Patent
active
047725397
ABSTRACT:
A method of reproducing sub-micron images in a first imaging layer. A second imaging layer is deposited on an etch-stop film formed on the first layer, and the second imaging layer is exposed to an E-beam at low dose. The resulting standing wave exposure pattern is converted into a corresponding topology pattern having peaks and valleys by exposure to a wet developer. Ions are implanted through the second imaging layer into portions of the first imaging layer below the valley portions of the standing wave topology pattern. The second imaging layer is removed without appreciably attacking the etch-stop layer, and then the etch stop layer is removed without appreciably attacking the first imaging layer. The first imaging layer is anisotropically etched in an O.sub.2 RIE, the implanted regions serving as an etch mask. The process results in the formation of small images at high throughput.
REFERENCES:
patent: 3799777 (1974-03-01), O'Keefe et al.
patent: 3873371 (1975-03-01), Wolf
patent: 3920483 (1975-11-01), Johnson et al.
patent: 4093503 (1978-06-01), Harris et al.
patent: 4231811 (1980-11-01), Somekh et al.
patent: 4298803 (1981-11-01), Matsuura et al.
patent: 4348804 (1982-09-01), Ogawa et al.
patent: 4377437 (1983-03-01), Taylor et al.
patent: 4394211 (1983-07-01), Uchiyama et al.
patent: 4403151 (1983-09-01), Mochiji et al.
patent: 4438556 (1984-03-01), Komatsu et al.
patent: 4451738 (1984-05-01), Smith
patent: 4502916 (1985-03-01), Umezaki et al.
patent: 4514251 (1985-04-01), van Ommen et al.
patent: 4551417 (1985-11-01), Suzuki et al.
patent: 4569124 (1986-02-01), Rensch et al.
Broyde, "Exposure of Photoresists", J. Electrochem. Soc.: Solid State Science, vol. 117(12), Dec. 1970, pp. 1555-1556.
"An Approach to Quarter-Micron E-Beam Lithography Using Optimized Double Layer Resist Process," Y. Lida et al, 1983 IEEE, IEDM 83, pp. 562-565.
"Electron Beam Fabrication of High Resolution Masks," J. L. Kenty et al, J. Vac. Sci. Technol. B 1 (4), Oct.-Dec. 1983, pp. 1211-1214.
"High Resolution Photomasks with Ion-Bombarded Polymethyl Methacrylate Masking Medium," B. A. MacIver, J. Electrochem. Soc.: Solid-State Science and Tech., Apr. 1982, pp. 827-830.
"Electron-Beam Direct Writing Technology for LSI Wiring Process," F. Murai et al, 1983 IEEE, IEDM 83, pp. 558-561.
"A New Electron Beam Patterning Technolgy for 0.2 .mu.m VLSI," T. Ishii et al, May 1985 VLSI Symp., pp. 70-71.
Chadurjian Mark F.
Dees Jos,e G.
International Business Machines - Corporation
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